Mechanism of formation of silicon carbide coating through the pack cementation process on carbon-carbon composite materials
DOI:
https://doi.org/10.17072/2223-1838-2020-4-385-401Keywords:
ultra-high-temperature ceramic coating, carbon-carbon composite material, silicon carbide, pack ce-mentationAbstract
The pack cementation process, used for obtaining coatings, is described, as a rule, in terms of solid-phase diffusion, which leads to saturation of the near-surface layer of the workpiece with a certain element. This method allows the deposition of a silicon carbide coating on carbon-carbon composite materials, that increases its resistance to the action of high-temperature oxidizing environments. An analysis of the kinetic features of the formation of silicon carbide on a carbon material indicated the difference between this method and the classical diffusion saturation. It turned out that it is necessary to consider additional processes of gas formation that occurs in the powder filling. A mechanism has been proposed, according to which it is possible to transfer silicon through the gaseous reagent SiO, generated in the backfill with the help of oxide additives, like aluminum oxide, which were previously considered inert.References
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